MB85R256F

The MB85R256F is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells.

The MB85R256F is able to retain data without using a back-up battery, as is needed for SRAM.

The memory cells used in the MB85R256F can be used for 10¹² read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM.

The MB85R256F uses a pseudo - SRAM interface.

■ FEATURES

• Bit configuration : 32,768 words × 8 bits

• Read/write endurance : 10¹² times / byte

• Data retention : 10 years (+85 °C), 95 years ( +55 °C), over 200 years ( + 35 °C)

• Operating power supply voltage : 2.7 V to 3.6 V

• Low power consumption : Operating power supply current 5 mA (Typ) 

                                             Standby current 5 μA (Typ)

• Operation ambient temperature range: − 40 °C to + 85 °C

• Package : 28-pin plastic SOP 

                  28-pin plastic TSOP(1) 

                  Both are RoHS compliant