MB85RC512T

The MB85RC512T is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 65,536 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells.

Unlike SRAM, the MB85RC512T is able to retain data without using a data backup battery.

The read/write endurance of the nonvolatile memory cells used for the MB85RC512T has improved to be at least 10¹³ cycles, significantly outperforming other nonvolatile memory products in the number.

The MB85RC512T does not need a polling sequence after writing to the memory such as the case of Flash memory or E2PROM.

■ FEATURES

• Bit configuration : 65,536 words × 8 bits

• Two-wire serial interface : Fully controllable by two ports: serial clock (SCL) and serial data (SDA).

• Operating frequency : 3.4 MHz (Max @HIGH SPEED MODE) 

                                       1 MHz (Max @FAST MODE PLUS)

• Read/write endurance : 10¹³ times / byte

• Data retention : 10 years ( +85℃), 95 years ( +55 ℃)

• Operating power supply voltage: 1.7 V to 3.6 V

• Low-power consumption : Operating power supply current 0.71 mA (Typ @3.4 MHz) 

                                                                                                   1.2 mA (Max @3.4 MHz) 

                                              Standby current 15μA (Typ) 

                                              Sleep current 4 μA (Typ)

• Operation ambient temperature range: -40 ℃ to + 85℃

• Package : 8-pin plastic SOP (FPT-8P-M02) 

                   RoHS compliant