MB85RS128TY

MB85RS128TY is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 16,384 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. This product is specifically targeted for high-temperature environment such as automotive applications.

MB85RS128TY adopts the Serial Peripheral Interface (SPI).

The MB85RS128TY is able to retain data without using a back-up battery, as is needed for SRAM.

The memory cells used in the MB85RS128TY can be used for 10¹³ read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM.

As MB85RS128TY does not need any waiting time in writing process, the write cycle time of MB85RS128TY is much shorter than that of Flash memories or E2PROM.

■ FEATURES

• Bit configuration : 16,384 words × 8 bits

• Serial Peripheral Interface : SPI (Serial Peripheral Interface) 

                                               Correspondent to SPI mode 0 (0, 0) and mode 3 (1, 1)

• Operating frequency : 40 MHz (Max)

• High endurance : 10¹³ times / byte

• Data retention : 40.2 years (+85 °C), 

                            10.9 years (+105 °C) 

                            3.38 years (+125 °C) or more 

                            Under evaluation for more than 3.38 year(+125 °C)

• Operating power supply voltage : 1.8 V to 3.6 V

• Low power consumption : Operating power supply current 2.5 mA (Max@40 MHz) 

                                             Standby current 45 μA (Max) 

                                             Sleep current 12 μA (Max)

• Operation ambient temperature range : − 40 °C to + 125 °C

• Package : 8-pin plastic SOP 

                  AEC-Q100 Grade 1 compliant 

                 RoHS compliant