MB85RDP16LX

MB85RDP16LX is a Data-Processing FRAM in a configuration of 2,048 words × 8 bits incorporating a 43-bit or 46-bit binary counter, where FRAM (Ferroelectric Random Access Memory) is able to retain data without using a back-up battery, can be used for 10¹³read/write operations and takes no wait time to write data, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells.

MB85RDP16LX can be accessed via Serial Peripheral interface (SPI) or Dual SPI.

This Data-Processing FRAM features short power up time, fast memory access and ultra-low power consumption. Together with the 43-bit or 46-bit binary counter function, MB85RDP16LX fits perfectly into energy harvesting and rotary encoder applications.

■ FEATURES

• Non-volatile memory configuration : 2,048 words × 8 bits

• Binary counter bit (for POS0/1/2/3) : 43-bit range (42bit mantissa + sign bit)

• Binary counter bit (for DIBC/DDBC) : 46-bit range (45bit mantissa + sign bit)

• Binary counter operation : Judged by the input position data or directly Increment and Decrement

• Interface : SPI (Serial Peripheral Interface) / Dual SPI 

                   Corresponding to SPI mode 0 (0, 0) and mode 3 (1, 1)

• Operating frequency : 15 MHz (Max for SPI) / 7.5 MHz (Max for Dual SPI)

• High endurance : 10¹³ times / byte

• Data retention : 10 years (+105℃)

• Operating power supply voltage : 1.65 V to 1.95 V

• Low power consumption : Operating power supply current 0.7 mA (Max @15 MHz) 

                                             Standby current 11 μA (Max @+105℃), 1 μA (+25℃)

• Operation ambient temperature : －40℃ to +105℃

• Package : 8-pin plastic SON 

                  RoHS compliant